Method to obtain uniform nitrogen profile in gate dielectrics

Details Method to obtain uniform nitrogen profile in gate dielectrics Method to obtain uniform nitrogen profile in gate dielectrics

2005-09-12

2008-10-14

Chaudhari, Chandra (Department: 2891)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S287000, C438S981000, C257SE21625

Reexamination Certificate

active

07435651

ABSTRACT:
The present invention, in one aspect, provides a method of manufacturing a microelectronics device100that includes depositing a first gate dielectric layer160over a substrate115, subjecting the first gate dielectric layer160to a first nitridation process, forming a second gate dielectric layer165over the substrate115and having a thickness less than a thickness of the first gate dielectric layer160, and subjecting the first and second gate dielectric layers160,165to a second nitridation process, wherein the first and second nitridation processes are different. The present invention also provides a microelectronics device100fabricated in accordance with the method.

REFERENCES:
patent: 6730566 (2004-05-01), Niimi et al.
patent: 6773999 (2004-08-01), Yoneda
patent: 7227201 (2007-06-01), Varghese et al.
patent: 2004/0070046 (2004-04-01), Niimi
patent: 2004/0102010 (2004-05-01), Khamankar et al.

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