Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2007-03-06
2007-03-06
Norton, Nadine (Department: 1765)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S719000, C438S743000
Reexamination Certificate
active
10607612
ABSTRACT:
A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.
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Kamp Thomas A.
Lee Chris
Lin Frank
Miller Alan J.
Puppo Helene Del
Lam Research Corporation
Martine & Penilla & Gencarella LLP
Norton Nadine
Tran Binh X.
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