Method to improve profile control and N/P loading in dual...

Details Method to improve profile control and N/P loading in dual... Method to improve profile control and N/P loading in dual...

2007-03-06

2007-03-06

Norton, Nadine (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S719000, C438S743000

Reexamination Certificate

active

10607612

ABSTRACT:
A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

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