Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-06-20
2006-06-20
Whitehead, Jr., Carl (Department: 2813)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S638000, C438S641000
Reexamination Certificate
active
07064068
ABSTRACT:
Narrow trenches in a substrate tend to fill more rapidly than wide trenches This results in a non-planar surface once all trenches have been filled. The present invention solves this problem by performing the electro-deposition in two steps. The plating bath used during the first step, is optimized for filling narrow trenches while the plating bath used during the second step, is optimized for filling wide trenches. The net result is a final layer having a planar surface, with all trenches being properly filled.
REFERENCES:
patent: 5814557 (1998-09-01), Venkatraman et al.
patent: 6136707 (2000-10-01), Cohen
patent: 6140241 (2000-10-01), Shue et al.
patent: 6207222 (2001-03-01), Chen et al.
patent: 6346479 (2002-02-01), Woo et al.
patent: 2004/0012090 (2004-01-01), Basol et al.
Chou Shih-Wei
Lin Ming-Wei
Tsai Ming-Hsing
Haynes and Boone LLP
Jr. Carl Whitehead
Rodgers Colleen E.
Taiwan Semiconductor Manufacturing Company , Ltd.
LandOfFree
Method to improve planarity of electroplated copper does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method to improve planarity of electroplated copper, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method to improve planarity of electroplated copper will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3710390