Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2007-11-20
2007-11-20
Lebentritt, Michael (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S775000, C438S786000, C438S791000, C257SE21192, C257SE21267, C257SE21268, C257SE21293
Reexamination Certificate
active
10623482
ABSTRACT:
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
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Pomarede Christophe F.
Todd Michael A.
Weeks Keith D.
Werkhoven Christiaan J.
ASM America Inc.
Knobbe Martens Olson & Bear LLP
Lebentritt Michael
Pompey Ron
LandOfFree
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