Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2011-06-21
2011-06-21
Lindsay, Jr., Walter L (Department: 2812)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S775000, C438S785000, C438S791000, C257SE21192, C257SE21267, C257SE21268, C427S255280
Reexamination Certificate
active
07964513
ABSTRACT:
Multiple sequential processes are conducted in a reaction chamber to form ultra high quality silicon-containing compound layers, including silicon nitride layers. In a preferred embodiment, a silicon layer is deposited on a substrate using trisilane as the silicon precursor. A silicon nitride layer is then formed by nitriding the silicon layer. By repeating these steps, a silicon nitride layer of a desired thickness is formed.
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Pomarede Christophe F.
Todd Michael A.
Weeks Keith D.
Werkhoven Christiaan J.
ASM America Inc.
Knobbe Martens Olson & Bear LLP
Lindsay, Jr. Walter L
Pompey Ron
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