Semiconductor device manufacturing: process – Chemical etching – Vapor phase etching
Reexamination Certificate
2011-06-28
2011-06-28
Vinh, Lan (Department: 1713)
Semiconductor device manufacturing: process
Chemical etching
Vapor phase etching
C438S009000, C438S706000, C156S345470
Reexamination Certificate
active
07968469
ABSTRACT:
A method for processing a workpiece in a plasma reactor chamber includes coupling RF power at a first VHF frequency f1to a plasma via one of the electrodes of the chamber, and providing a center ground return path for RF current passing directly between the ceiling electrode and the workpiece support electrode for the frequency f1. The method further includes providing a variable height edge ground annular element and providing a ground return path through the edge ground annular element for the frequency f1. The method controls the uniformity of plasma ion density distribution by controlling the distance between the variable height edge ground annular element and one of: (a) height of ceiling electrode or (b) height of workpiece support electrode.
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Bera Kallol
Buchberger, Jr. Douglas A.
Carducci James
Collins Kenneth S.
Cruse James P.
Applied Materials Inc.
Vinh Lan
Wallace Robert M.
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