Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-07-05
2008-08-12
Baumeister, Bradley W. (Department: 2891)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S787000, C438S259000, C438S265000, C257SE21179, C257SE27103, C257SE21680, C257SE21682
Reexamination Certificate
active
07410869
ABSTRACT:
In a method of manufacturing a semiconductor device such as a flash memory device, an insulating pattern having an opening is formed to partially expose a surface of a substrate. A first silicon layer is formed on the exposed surface portion of the substrate and the insulating pattern. The first silicon layer has an opened seam overlying the previously exposed portion of the substrate. A heat treatment on the substrate is performed at a temperature sufficient to induce silicon migration so as to cause the opened seam to be closed via the silicon migration. A second silicon layer is then formed on the first silicon layer. Thus, surface profile of a floating gate electrode obtained from the first and second silicon layers may be improved.
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Jang Won-Jun
Jee Jung-Geun
Leam Hun-Hyeoung
Lee Hyeon-Deok
Lee Sang-Hoon
Baumeister Bradley W.
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Ward Eric
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