Method of manufacturing a metal wiring structure

Details Method of manufacturing a metal wiring structure Method of manufacturing a metal wiring structure

2009-07-21

2011-11-08

Ghyka, Alexander (Department: 2812)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S618000, C438S627000, C257SE21584

Reexamination Certificate

active

08053374

ABSTRACT:
In a method of manufacturing a metal wiring structure, a first metal wiring and a first barrier layer are formed on a substrate, and the first barrier layer is nitridated. An insulating interlayer is formed on the substrate so as to extend over the first metal wiring and the first barrier layer. Part of the insulating interlayer is removed to form a hole exposing at least part of the first metal wiring and part of the first barrier layer. A nitidation plasma treatment is performed on the exposed portion of the first barrier layer. A second barrier layer is formed along the bottom and sides of the hole. A plug is formed on the second barrier layer to fill the hole.

REFERENCES:
patent: 6159851 (2000-12-01), Chen et al.
patent: 2005/0245065 (2005-11-01), Motoyama
patent: 2000-235962 (2000-08-01), None
patent: 1020060041408 (2006-05-01), None

Affiliated with

Also associated with

Rating

Method of manufacturing a metal wiring structure does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of manufacturing a metal wiring structure, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of manufacturing a metal wiring structure will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4306514