Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-05
2005-07-05
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S232000, C438S531000, C438S762000
Reexamination Certificate
active
06913979
ABSTRACT:
Disclosed is a method of manufacturing a MOS transistor having an enhanced reliability. A passivation layer is formed on a gate electrode and on a substrate to prevent a generation of a recess on the substrate. After a mask pattern is formed on the substrate for masking a portion of the substrate, impurities are implanted into an exposed portion of the substrate to form source and drain regions. The substrate is rinsed so that the passivation layer or a recess-prevention layer is substantially entirely or partially removed while the mask pattern is substantially completely removed, thereby forming the MOS transistor. Therefore, the generation of the recess in the source and drain region of the substrate can be prevented due to the passivation layer during rinsing of the substrate.
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Hyung Yong-Woo
Kim Bong-Hyun
Leam Heon-Heoung
Lee Hyeon-Deok
Park Tae-Soo
Fourson George
Maldonado Julio J.
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