Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – Fluid growth from gaseous state combined with preceding...
Reexamination Certificate
2006-09-27
2009-11-03
Nguyen, Dao H (Department: 2818)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
Fluid growth from gaseous state combined with preceding...
C438S373000, C438S407000, C438S440000, C438S527000, C438S961000, C257SE21001, C257SE21092, C257SE21214, C250S492200, C250S492210, C250S497100
Reexamination Certificate
active
07611975
ABSTRACT:
An implanter provides two-dimensional scanning of a substrate relative to an implant beam so that the beam draws a raster of scan lines on the substrate. The beam current is measured at turnaround points off the substrate and the current value is used to control the subsequent fast scan speed so as to compensate for the effect of any variation in beam current on dose uniformity in the slow scan direction. The scanning may produce a raster of non-intersecting uniformly spaced parallel scan lines and the spacing between the lines is selected to ensure appropriate dose uniformity.
REFERENCES:
patent: 6268609 (2001-07-01), Ryding et al.
patent: 6297510 (2001-10-01), Farley
patent: 2001/0032937 (2001-10-01), Berrian
Banks Peter Michael
Dobson Matthew Peter
Farley Marvin
Kindersley Peter
Murrell Adrian
Applied Materials Inc.
Birch Stewart Kolasch & Birch
Nguyen Dao H
Tennant Boult Wade
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