Method of generating test pattern for semiconductor...

Error detection/correction and fault detection/recovery – Pulse or data error handling – Digital logic testing

Reexamination Certificate

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C714S728000, C714S739000

Reexamination Certificate

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06427218

ABSTRACT:

BACKGROUND OF THE INVENTION
The present invention relates to a method of generating a test pattern for a semiconductor integrated circuit with which the semiconductor integrated circuit is tested by using a scanning method for a delay anomaly occurring during the manufacturing thereof and to a method of testing the semiconductor integrated circuit by using the generated test pattern.
With the rapid advancement of a miniaturizing technique used in a semiconductor process in recent years, semiconductor integrated circuits have been increased sharply in scale and function, which makes it more difficult to test the semiconductor integrated circuits. As a solution to the problem, a scanning method and the like have been used widely as techniques for facilitating the testing of the semiconductor integrated circuits so that a fault represented by a stuck fault model is tested efficiently. In the case of detecting a fault assumed to be the stuck fault model, a fault detecting ability is not dependent on the frequency of a clock signal for synchronization so that a scan test is normally conducted by using a clock frequency lower than the actual operating speed.
However, process variations have become more distinct as smaller geometries have been defined in the semiconductor process, so that sufficient testing quality is not guaranteed by merely conducting a test in accordance with a conventional scanning method using a low clock frequency. As a replacement, a test considering a signal delay on a signal path, such as a path delay test using the same clock frequency as used during actual operation has been in greater demand. For example, Japanese Unexamined Patent Publication No. HEI 9-269959 discloses a technique used in a conventional path delay test.
The conventional path delay test has been performed by assuming a fault model in which a delay value on a signal path is increased by a defect produced in the manufacturing process, i.e., a fault model in which a signal which should normally reach a terminal point of the signal path in one clock period is prevented by the defect from reaching the terminal point in one clock period.
However, the conventional path delay test has not been performed by assuming a fault model in which the delay value is reduced excessively against expectations by the defect produced in the manufacturing process (hereinafter referred to as an excessively reduced delay).
In a synchronous semiconductor integrated circuit, the following two phenomena can be listed as factors which distinguish the defect produced in the manufacturing process as the excessively reduced delay.
(1) Propagation of a signal along a signal path between flip-flops which is faster than a design value.
(2) Variations in the skew value of a clock supplied to each of the flip-flops via different clock lines.
If such phenomena occur, the signal path between the flip-flops undergoes a mis-operation termed a hold error (data retention error).
The two factors will be described herein below with reference to the drawings.
FIG. 7
partially shows a semiconductor integrated circuit to be tested. As shown in
FIG. 7
, a combinational circuit
103
containing at least one combinational logic element is disposed between first and second flip-flops
101
and
102
each having a data input terminal D, a data output terminal Q, and a clock input terminal CK. One of a plurality of signal paths connecting the first and second-flip-flops
101
and
102
is designated at
104
. The clock input terminal CK of the first flip-flop
101
is connected to a first clock line
106
via a first clock tree buffer
105
. The clock input terminal CK of the second flip-flop
102
is connected to a second clock line
108
via a second clock tree buffer
107
.
FIGS. 8A
to
8
C show signal waveforms illustrating the operation of the semiconductor integrated circuit of
FIG. 7
, of which
FIG. 8A
shows the case where the degree of delay on a signal path
104
is in a normal range,
FIG. 8B
shows the case where a fault is caused by an excessively reduced delay with which a signal propagates along the signal path
104
faster than a design value, and
FIG. 8C
shows the case where a skew resulting from variations in delay value occurs between the first and second clock lines
106
and
108
.
As shown in
FIG. 8A
, a delay value on the signal path
104
is determined at the design stage to allow a hold margin A for the second flip-flip
102
even when the signal propagates at a highest expected speed. At this stage, the sizes, locations, and the like of the first and second clock tree buffers
106
and
107
are adjusted such that the amount of skew of a clock signal on each of the first and second clock lines
106
and
108
becomes zero or nearly zero.
However, if the signal on the signal path
104
propagates at a speed not higher than the delay value determined at the design stage due to the factor (1) resulting from variations or a defect in the process of manufacturing a semiconductor integrated circuit as shown in
FIG. 8B
, the second flip-flop
102
undergoes a hold error, which may cause the mis-operation of the second flip-flop
102
.
Even when the delay value on the signal path
104
is normal, if the first clock tree buffer
105
, the second clock tree buffer
107
, the first clock line
106
, or the second clock line
108
suffers a defect or variations during the manufacturing thereof and the clock signal on the clock line
106
or
108
develops a skew due to the factor (2) as shown in
FIG. 8C
, the second flip-flop
102
latches by mistake the signal after the transition from the first flip-flop
101
so that a mis-operation occurs.
If any of the signal paths undergoes a mis-operation due to a defect produced in the manufacturing process, it is necessary to conduct a test for detecting a fault on the signal path and generate a test pattern to be used in the test.
SUMMARY OF THE INVENTION
It is therefore an object of the present invention to allow the generation of a test pattern necessary for the testing of a scan-designed semiconductor integrated circuit for an excessively reduced delay and allow a test for the excessively reduced delay.
To attain the foregoing object, a first method of generating a test pattern for a semiconductor integrated circuit according to the present invention assumes a method of generating a test pattern for a semiconductor integrated circuit comprising a logic circuit containing a combinational logic element, a first sequential circuit having an output side connected to an input side of the logic circuit, and a second sequential circuit having an input side connected to an output side of the logic circuit, whereby a test pattern for testing a signal path between the first and second sequential circuits for a data retention error associated with data held by the second sequential circuit based on output data of the second sequential circuit is generated, the method comprising the steps of: generating a first test pattern by setting, at the first sequential circuit, a first set value for the signal path such that the signal path is activated immediately before and after one pulse of a clock signal for synchronization is inputted; and generating a second test pattern by setting, at the first sequential circuit, a second set value obtained by inverting the first set value.
In accordance with the first method of generating a test pattern for a semiconductor integrated circuit, the first test pattern is generated by setting, at the first sequential circuit, the first set value for the signal path such that the signal path is activated immediately before and after one pulse of the clock signal for synchronization is inputted and the second test pattern is generated by setting, at the first sequential circuit, the second set value obtained by inverting the first set value. This allows testing when a mis-operation results from a data retention error due to an excessively reduced delay on the signal path to be tested.
A second method of generating a test pattern for a semiconductor integra

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