Method of forming pattern

Details Method of forming pattern Method of forming pattern

2009-07-29

2010-11-30

Walke, Amanda C. (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S322000, C430S324000, C430S270100, C216S058000, C216S067000

Reexamination Certificate

active

07842451

ABSTRACT:
Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.

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