Method of forming pattern

Details Method of forming pattern Method of forming pattern

2005-06-03

2009-08-18

Chea, Thorl (Department: 1795)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S322000, C430S324000, C216S058000, C216S067000

Reexamination Certificate

active

07575855

ABSTRACT:
Disclosed is a method of forming a pattern. A first organic polymer layer is formed on a substrate on which an underlying layer, and then a second organic polymer layer, which has an opening partially exposing the first organic polymer layer, is formed on the first organic polymer layer. Next, a silicon-containing polymer layer is formed on the second organic polymer layer to cover the opening. The silicon-containing polymer layer is oxidized and simultaneously the second organic polymer layer and the first organic polymer layer are ashed by oxygen plasma to form a pattern having an anisotropy-shape. The underlying layer is etched using the silicon-containing polymer layer and the first organic polymer layer as an etching mask to form a pattern.

REFERENCES:
patent: 5457003 (1995-10-01), Tanaka et al.
patent: 07-104483 (1995-04-01), None
patent: 07-135140 (1995-05-01), None
patent: 2001-267230 (2001-09-01), None
patent: 1020010011765 (2001-02-01), None
patent: 1020010088831 (2001-09-01), None
patent: 10-2001-0092385 (2001-10-01), None
patent: 2003-0029804 (2003-04-01), None

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