Method of forming material using atomic layer deposition and...

Details Method of forming material using atomic layer deposition and... Method of forming material using atomic layer deposition and...

2006-08-08

2006-08-08

Nguyen, Tuan H. (Department: 2813)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S255000, C438S396000

Reexamination Certificate

active

07087482

ABSTRACT:
Disclosed are methods of forming dielectric materials using atomic layer deposition (ALD) and methods of forming dielectric layers from such materials on a semiconductor device. The ALD process utilizes a first reactant containing at least one alkoxide group that is chemisorbed onto a surface of a substrate and then reacted with an activated oxidant that contains no hydroxyl group to form a dielectric material exhibiting excellent step coverage and improved leakage current characteristics.

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patent: 2004/0009307 (2004-01-01), Koh et al.
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