Method of forming a shallow trench isolation structure

Details Method of forming a shallow trench isolation structure Method of forming a shallow trench isolation structure

2011-05-24

2011-05-24

Stark, Jarrett J (Department: 2823)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S196000, C438S207000, C257S374000

Reexamination Certificate

active

07947551

ABSTRACT:
An embodiment of the disclosure includes a method of forming a shallow trench isolation structure. A substrate is provided. The substrate includes a top surface. A trench is formed to extend from the top surface into the substrate. The trench has sidewalls and a bottom surface. A silicon liner layer is formed on the sidewalls and the bottom surface. A flowable dielectric material is filled in the trench. An anneal process is performed to densify the flowable dielectric material and convert the silicon liner layer into a silicon oxide layer simultaneously.

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