Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2005-07-05
2010-06-15
Toledo, Fernando L (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S165000, C438S225000, C438S297000, C438S362000, C438S431000, C438S432000, C438S635000, C438S766000, C438S680000, C257SE21082, C257SE21283, C257SE21558
Reexamination Certificate
active
07736963
ABSTRACT:
In an embodiment, a method of forming a gate structure for a semiconductor device includes forming a preliminary gate structure on a semiconductor substrate. The preliminary gate structure includes a gate oxide pattern and a conductive pattern sequentially stacked on the substrate. Then, a re-oxidation process is performed to the substrate having the preliminary gate structure using an oxygen radical including at least one oxygen atom, so that an oxide layer is formed on a surface of the substrate and sidewalls of the preliminary gate structure to form the gate structure for a semiconductor device. The thickness of the gate oxide pattern is prevented from increasing, and the quality of the oxide layer is improved.
REFERENCES:
patent: 4587710 (1986-05-01), Tsao
patent: 5208175 (1993-05-01), Choi et al.
patent: 5412246 (1995-05-01), Dobuzinsky et al.
patent: 5633184 (1997-05-01), Tamura et al.
patent: 5739066 (1998-04-01), Pan
patent: 5847427 (1998-12-01), Hagiwara
patent: 5897353 (1999-04-01), Kim et al.
patent: 5928966 (1999-07-01), Yamane
patent: 6040241 (2000-03-01), Lee et al.
patent: 6133150 (2000-10-01), Nakajima et al.
patent: 6198144 (2001-03-01), Pan et al.
patent: 6228717 (2001-05-01), Hazama et al.
patent: 6274429 (2001-08-01), Misra
patent: 6326266 (2001-12-01), Brambilla et al.
patent: 6368984 (2002-04-01), Tomita et al.
patent: 6486067 (2002-11-01), Shen et al.
patent: 6551913 (2003-04-01), Kim et al.
patent: 6566210 (2003-05-01), Ajmera et al.
patent: 6583036 (2003-06-01), Hayamizu
patent: 6624023 (2003-09-01), Han et al.
patent: 6660587 (2003-12-01), Ahn et al.
patent: 6696331 (2004-02-01), Yang et al.
patent: 6716734 (2004-04-01), Seitz et al.
patent: 6720630 (2004-04-01), Mandelman et al.
patent: 6746925 (2004-06-01), Lin et al.
patent: 6764942 (2004-07-01), Tu et al.
patent: 6770538 (2004-08-01), Li et al.
patent: 6803622 (2004-10-01), Matsuno et al.
patent: 6838365 (2005-01-01), Gilton et al.
patent: 6872624 (2005-03-01), Odake et al.
patent: 6905927 (2005-06-01), Ahn et al.
patent: 6987056 (2006-01-01), Lim et al.
patent: 6992010 (2006-01-01), Chou et al.
patent: 7060558 (2006-06-01), Hofmann et al.
patent: 7157332 (2007-01-01), Kwak
patent: 7179746 (2007-02-01), Ohmi et al.
patent: 7183156 (2007-02-01), Goldbach et al.
patent: 7425480 (2008-09-01), Ozawa et al.
patent: 2001/0000112 (2001-04-01), Lin et al.
patent: 2002/0027259 (2002-03-01), Ikemasu et al.
patent: 2002/0048888 (2002-04-01), Li et al.
patent: 2002/0106859 (2002-08-01), Odake et al.
patent: 2002/0185738 (2002-12-01), Kim et al.
patent: 2003/0010972 (2003-01-01), Ajmera et al.
patent: 2004/0029354 (2004-02-01), You et al.
patent: 2004/0106281 (2004-06-01), Tu et al.
patent: 2004/0126988 (2004-07-01), Hong et al.
patent: 2004/0197980 (2004-10-01), Ikemasu et al.
patent: 2005/0009281 (2005-01-01), Lim et al.
patent: 2005/0153509 (2005-07-01), Kwak
patent: 2005/0266665 (2005-12-01), Youn et al.
patent: 2006/0073666 (2006-04-01), Lim et al.
patent: 2006/0110900 (2006-05-01), Youn et al.
patent: 2006/0270186 (2006-11-01), Tsunomura et al.
patent: 2007/0010068 (2007-01-01), Lee et al.
patent: 2007/0059943 (2007-03-01), Li et al.
patent: 2007/0066013 (2007-03-01), Lim et al.
patent: 9-172011 (1997-06-01), None
patent: 11-345970 (1999-12-01), None
patent: 2004-0003922 (2004-01-01), None
patent: 2004-0054053 (2004-06-01), None
English language abstract of the Korean Publication No. 2004-0003922.
English language abstract of the Korean Publication No. 9-172011.
English language abstract of Korean Publication No. 2004-0003922.
English language abstract of Korean Publication No. 2004-0054053.
Hyung Yong-Woo
Kim Jung-Hwan
Leam Hun-Hyeoung
Lee Jai-Dong
Lee Woong
Harness & Dickey & Pierce P.L.C.
Samsung Electronics Co,. Ltd.
Singal Ankush k
Toledo Fernando L
LandOfFree
Method of forming a gate structure for a semiconductor... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of forming a gate structure for a semiconductor..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of forming a gate structure for a semiconductor... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4187094