Method of fabricating a nitrided silicon oxide gate...

Details Method of fabricating a nitrided silicon oxide gate... Method of fabricating a nitrided silicon oxide gate...

2006-10-30

2010-06-15

Smith, Zandra (Department: 2822)

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

C438S775000

Reexamination Certificate

active

07737050

ABSTRACT:
A method of forming a nitrided silicon oxide layer. The method includes: forming a silicon dioxide layer on a surface of a silicon substrate; performing a rapid thermal nitridation of the silicon dioxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form an initial nitrided silicon oxide layer; and performing a rapid thermal oxidation or anneal of the initial nitrided silicon oxide layer at a temperature of less than or equal to about 900° C. and a pressure greater than about 500 Torr to form a nitrided silicon oxide layer. Also a method of forming a MOSFET with a nitrided silicon oxide dielectric layer.

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