Method of depositing an amorphous carbon layer

Details Method of depositing an amorphous carbon layer Method of depositing an amorphous carbon layer

2005-01-11

2005-01-11

Walke, Amanda (Department: 1752)

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

C430S311000, C430S314000, C430S315000, C430S317000, C430S322000, C430S324000

Reexamination Certificate

active

06841341

ABSTRACT:
A method of forming an integrated circuit using an amorphous carbon film. The amorphous carbon film is formed by thermally decomposing a gas mixture comprising a hydrocarbon compound and an inert gas. The amorphous carbon film is compatible with integrated circuit fabrication processes. In one integrated circuit fabrication process, the amorphous carbon film is used as a hardmask. In another integrated circuit fabrication process, the amorphous carbon film is an anti-reflective coating (ARC) for deep ultraviolet (DUV) lithography. In yet another integrated circuit fabrication process, a multi-layer amorphous carbon anti-reflective coating is used for DUV lithography.

REFERENCES:
patent: 4486286 (1984-12-01), Lewin et al.
patent: 4717622 (1988-01-01), Kurokawa et al.
patent: 4782380 (1988-11-01), Shankar et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4957591 (1990-09-01), Sato et al.
patent: 5022959 (1991-06-01), Itoh et al.
patent: 5087959 (1992-02-01), Omori et al.
patent: 5121706 (1992-06-01), Nichols et al.
patent: 5221414 (1993-06-01), Langley et al.
patent: 5232871 (1993-08-01), Ho
patent: 5246884 (1993-09-01), Jaso et al.
patent: 5397558 (1995-03-01), Miyanaga et al.
patent: 5461003 (1995-10-01), Havemann et al.
patent: 5470661 (1995-11-01), Bailey et al.
patent: 5549935 (1996-08-01), Nguyen et al.
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5589233 (1996-12-01), Law et al.
patent: 5635423 (1997-06-01), Huang et al.
patent: 5674355 (1997-10-01), Cohen et al.
patent: 5674573 (1997-10-01), Mitani et al.
patent: 5679267 (1997-10-01), Belcher et al.
patent: 5679269 (1997-10-01), Cohen et al.
patent: 5691010 (1997-11-01), Kuramoto et al.
patent: 5710067 (1998-01-01), Foote et al.
patent: 5720808 (1998-02-01), Hirabayashi et al.
patent: 5744865 (1998-04-01), Jeng et al.
patent: 5759913 (1998-06-01), Fulford, Jr. et al.
patent: 5789320 (1998-08-01), Andricacos et al.
patent: 5795648 (1998-08-01), Goel et al.
patent: 5804259 (1998-09-01), Robles
patent: 5824365 (1998-10-01), Sandhu et al.
patent: 5830979 (1998-11-01), Nakayama et al.
patent: 5866920 (1999-02-01), Matsumoto et al.
patent: 5900288 (1999-05-01), Kuhman et al.
patent: 5930669 (1999-07-01), Uzoh
patent: 5942328 (1999-08-01), Grill et al.
patent: 5981000 (1999-11-01), Grill et al.
patent: 5989623 (1999-11-01), Chen et al.
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 5998100 (1999-12-01), Azuma et al.
patent: 6020458 (2000-02-01), Lee et al.
patent: 6030901 (2000-02-01), Hopper et al.
patent: 6030904 (2000-02-01), Grill et al.
patent: 6033979 (2000-03-01), Endo
patent: 6043167 (2000-03-01), Lee et al.
patent: 6057226 (2000-05-01), Wong
patent: 6057227 (2000-05-01), Harvey
patent: 6064118 (2000-05-01), Sasaki
patent: 6066577 (2000-05-01), Cooney, III et al.
patent: 6080529 (2000-06-01), Ye et al.
patent: 6127263 (2000-10-01), Parikh
patent: 6140224 (2000-10-01), Lin
patent: 6140226 (2000-10-01), Grill et al.
patent: 6143476 (2000-11-01), Ye et al.
patent: 6147407 (2000-11-01), Jin et al.
patent: 6153935 (2000-11-01), Edelstein et al.
patent: 6165890 (2000-12-01), Kohl et al.
patent: 6183930 (2001-02-01), Ueda et al.
patent: 6211065 (2001-04-01), Xi et al.
patent: 6214730 (2001-04-01), Cooney, III et al.
patent: 6235629 (2001-05-01), Takenaka
patent: 6265779 (2001-07-01), Grill et al.
patent: 6291334 (2001-09-01), Somekh
patent: 6316347 (2001-11-01), Chang et al.
patent: 6323119 (2001-11-01), Xi et al.
patent: 6331380 (2001-12-01), Ye et al.
patent: 6333255 (2001-12-01), Sekiguchi
patent: 6346747 (2002-02-01), Grill et al.
patent: 6380106 (2002-04-01), Lim et al.
patent: 6413852 (2002-07-01), Grill et al.
patent: 6428894 (2002-08-01), Babich et al.
patent: 6458516 (2002-10-01), Ye et al.
patent: 6498070 (2002-12-01), Chang et al.
patent: 6514857 (2003-02-01), Naik et al.
patent: 6541397 (2003-04-01), Bencher
patent: 6548417 (2003-04-01), Dao et al.
patent: 6573030 (2003-06-01), Fairbairn et al.
patent: 6596465 (2003-07-01), Mangat et al.
patent: 6635967 (2003-10-01), Chang et al.
patent: 20020028392 (2002-03-01), Jin et al.
patent: 0 224 013 (1987-06-01), None
patent: 0 381 109 (1990-08-01), None
patent: 0 387 656 (1990-09-01), None
patent: 0 540 444 (1993-05-01), None
patent: 0 560 617 (1993-09-01), None
patent: 0 696 819 (1996-02-01), None
patent: 0 701 283 (1996-03-01), None
patent: 0 768 388 (1997-04-01), None
patent: 0 901 156 (1999-03-01), None
patent: 2299345 (1996-10-01), None
patent: 02-135736 (1990-05-01), None
patent: 11-026578 (1997-01-01), None
patent: 09-045633 (1997-02-01), None
patent: 9933102 (1999-07-01), None
patent: WO 0005763 (2000-02-01), None
Matsubara, et al., “Low-k Fluorinated Amorphous Carbon Interlayer Technology for Quarter Micron Devices”,IEDM(1996), pp. 369-372.
Robles, et al., “Characterization of High Density Plasma Chemical Vapor Deposited α-Carbon and α-Fluorinated Carbon Films For Ultra Low Dielectric Applications”,Int'l. Dielectrics for ULSI Multilevel Interconnection Conf.(1997), 8 pages.
Grill, et al., “Diamondlike Carbon Materials as Low-k Dielectrics for Multilevel Interconnects in ULSI”,J. Electrochem. Soc.145 (5) (1998).
Endo, et al., “Preparation and Properties of Fluorinated Amorphous Carbon Thin Films by Plasma Enhanced Chemical Vapor Deposition”,Mat. Res. Symp. Proc.vol. 381, Materials Research Society (1995), pp. 249-254.
Takeishi, et al., “Fluorocarbon Films deposited by PECVD with High thermal resistance and Low Dielectric Constants”,Semiconductor World16 (2) (1997), pp. 71-77.
Tue Nguyen, Bruce d. Ulrich, Lynn R. Allen and David R. Evans, “A Novel Damscene Process for One Mask Via/Interconnect Formation,” 1996 Symposium on VLSI Technology Digest of Technical Papers, pp. 118-119.
European PCT International Search Report for PCT/US98/23888 Dated Mar. 3, 1999.
S. Lakshminarayanan, J. Steigerwald, D. T. Price, M. Bourgeois, T. P. Chow, “Contact and Via Structures with Copper Interconnects Fabricated Using Dual Damascene Technology,” Electron Device Letters, vol. 15, No. 8 Aug. 1994, pp. 307-309.
Rajiv V. Joshi, “A New Damascene Structure for Submicrometer Interconnect Wiring,” Electron Device Letters, vol. 14, No. 3, Mar. 1993, pp. 129-132.
Howard Landis, Peter Burke, William Cote, William Hill, Cheryl Hoffman, Carter Kaanta, Charles Koburger, Walter Lange, Micheal Leach and Stephen Luce, “Integration of chemical-mechanical polishing into CMOS integrated circuit manufacturing,” Thin Solid Films, 220 (1992), pp. 1-7.
Carter W. Kaanta, Susuan G. Bombardier, William J. Cote, William R. Hill, Gloria Kerszykowski, Howard S. Landis, Dan J. Poindexter, Curtis W. Pollard, Gilbert H. Ross, James G. Ryan, Stuart Wolff, John E. Cronin, “Dual Damascene: A Ulsi Wiring Technology,” Jun. 11-12, 1991 VMIC Conference, pp. 144-152.
CRC Handbook of Chemistry and Physics, 79thEdition (1998-1999), pp. 12-49 and 12-55.
Grill et al., “Diamondlike Carbon Films by RF Plasma-Assisted Chemical Vapor Deposition From Acetylene”, IBM Journal of Research and Development, 34(6), 1990, p. 849-857.
T. Licata, M. Okazaki, M. Ronay, W. Landers, T. Ohiwa, H. Poetzlberger, H. Aochi, D. Dobuzinsky, R. Filippi, D. Restaino, D. Knorr, J. Ryan, “Dual Damascene Al Wiring For 256M DRAM,” Jun. 27-29, 1995 VMIC Conference, pp. 596-602.
IBM Technical Disclosure Bulletin, Nov. 1993 “Damascene: Optimized Etch Stop Structure and Method”, vol. 36; Issue 11, p. 649.
European Search Report for 01102401.5-1235, dated Jun. 9, 2004 (AMAT/4227.EP).

Affiliated with

Also associated with

Rating

Method of depositing an amorphous carbon layer does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method of depositing an amorphous carbon layer, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of depositing an amorphous carbon layer will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3372985