Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2007-08-07
2007-08-07
Geyer, Scott B. (Department: 2812)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C257SE21168
Reexamination Certificate
active
11069348
ABSTRACT:
We have discovered a method of providing a thin, approximately from about 2 Å to about 100 Å thick TaNseed layer, which can be used to induce the formation of alpha tantalum when tantalum is deposited over the TaNseed layer. Further, the TaNseed layer exhibits low resistivity, in the range of 30 μΩcm and can be used as a low resistivity barrier layer in the absence of an alpha tantalum layer. In one embodiment of the method, a TaN film is altered on its surface to form the TaNseed layer. In another embodiment of the method, a Ta film is altered on its surface to form the TaNseed layer.
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Chen Fusen E.
Chiang Tony
Chin Barry L.
Ding Peijun
Forster John C.
Church Shirley L.
Geyer Scott B.
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