Method of depositing a low k dielectric with organo silane

Details Method of depositing a low k dielectric with organo silane Method of depositing a low k dielectric with organo silane

1998-02-11

2000-04-25

Fahmy, Wael

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

438638, 438789, 438780, 438763, H01L 2131

Patent

active

060543795

ABSTRACT:
A method and apparatus for depositing a low dielectric constant film by reaction of an organo silane compound and an oxidizing gas. The oxidized organo silane film has excellent barrier properties for use as a liner or cap layer adjacent other dielectric layers. The oxidized organo silane film can also be used as an etch stop or an intermetal dielectric layer for fabricating dual damascene structures. The oxidized organo silane films also provide excellent adhesion between different dielectric layers. A preferred oxidized organo silane film is produced by reaction of methyl silane, CH.sub.3 SiH.sub.3, and N.sub.2 O.

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