Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-07-11
2006-07-11
Nhu, David (Department: 2818)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S770000, C438S775000
Reexamination Certificate
active
07074708
ABSTRACT:
A method for processing a substrate including depositing a dielectric layer containing silicon, oxygen, and carbon on the substrate by chemical vapor deposition, wherein the dielectric layer has a carbon content of at least 1% by atomic weight and a dielectric constant of less than about 3, and depositing a silicon and carbon containing layer on the dielectric layer. The dielectric constant of a dielectric layer deposited by reaction of an organosilicon compound having three or more methyl groups is significantly reduced by further depositing an amorphous hydrogenated silicon carbide layer by reaction of an alkylsilane in a plasma of a relatively inert gas.
REFERENCES:
patent: 4168330 (1979-09-01), Kaganowicz
patent: 4532150 (1985-07-01), Endo et al.
patent: 4557946 (1985-12-01), Sacher et al.
patent: 4789648 (1988-12-01), Chow et al.
patent: 4798629 (1989-01-01), Wood et al.
patent: 4812325 (1989-03-01), Ishihara et al.
patent: 4824690 (1989-04-01), Heinecke et al.
patent: 4828880 (1989-05-01), Jenkins et al.
patent: 4845054 (1989-07-01), Mitchener
patent: 4894352 (1990-01-01), Lane et al.
patent: 4900591 (1990-02-01), Bennett et al.
patent: 4973511 (1990-11-01), Farmer et al.
patent: 4981724 (1991-01-01), Hochberg et al.
patent: 5000113 (1991-03-01), Wang et al.
patent: 5028566 (1991-07-01), Lagendijk
patent: 5040046 (1991-08-01), Chabra et al.
patent: 5093153 (1992-03-01), Brochot et al.
patent: 5120680 (1992-06-01), Foo et al.
patent: 5124014 (1992-06-01), Foo et al.
patent: 5204141 (1993-04-01), Roberts et al.
patent: 5224441 (1993-07-01), Felts et al.
patent: 5246887 (1993-09-01), Yu
patent: 5250473 (1993-10-01), Smits
patent: 5279867 (1994-01-01), Friedt et al.
patent: 5290736 (1994-03-01), Sato et al.
patent: 5298587 (1994-03-01), Hu et al.
patent: 5314724 (1994-05-01), Tsukune et al.
patent: 5352493 (1994-10-01), Dorfman et al.
patent: 5360646 (1994-11-01), Morita
patent: 5362526 (1994-11-01), Wang et al.
patent: 5364666 (1994-11-01), Williams et al.
patent: 5465680 (1995-11-01), Loboda
patent: 5466431 (1995-11-01), Dorfman et al.
patent: 5468520 (1995-11-01), Williams et al.
patent: 5488015 (1996-01-01), Havemann et al.
patent: 5492736 (1996-02-01), Laxman et al.
patent: 5494712 (1996-02-01), Hu et al.
patent: 5508368 (1996-04-01), Knapp et al.
patent: 5554570 (1996-09-01), Maeda et al.
patent: 5559367 (1996-09-01), Cohen et al.
patent: 5563105 (1996-10-01), Dobuzinsky et al.
patent: 5578523 (1996-11-01), Fiordalice et al.
patent: 5593247 (1997-01-01), Endres et al.
patent: 5593741 (1997-01-01), Ikeda
patent: 5598027 (1997-01-01), Matsuura
patent: 5616369 (1997-04-01), Williams et al.
patent: 5618619 (1997-04-01), Petrmichl et al.
patent: 5637351 (1997-06-01), O'Neal et al.
patent: 5638251 (1997-06-01), Goel et al.
patent: 5679413 (1997-10-01), Petrmichl et al.
patent: 5683940 (1997-11-01), Yahiro
patent: 5693563 (1997-12-01), Teong
patent: 5700720 (1997-12-01), Hashimoto
patent: 5703404 (1997-12-01), Matsuura
patent: 5739579 (1998-04-01), Chiang et al.
patent: 5753564 (1998-05-01), Fukada
patent: 5789319 (1998-08-01), Havemann et al.
patent: 5807785 (1998-09-01), Ravi
patent: 5817572 (1998-10-01), Chiang et al.
patent: 5818071 (1998-10-01), Loboda et al.
patent: 5821168 (1998-10-01), Jain
patent: 5834162 (1998-11-01), Malba
patent: 5858880 (1999-01-01), Dobson et al.
patent: 5888593 (1999-03-01), Petrmichl et al.
patent: 5891799 (1999-04-01), Tsui
patent: 5989998 (1999-11-01), Sugahara et al.
patent: 6054206 (2000-04-01), Mountsier
patent: 6054379 (2000-04-01), Yau et al.
patent: 6068884 (2000-05-01), Rose et al.
patent: 6072227 (2000-06-01), Yau et al.
patent: 6140226 (2000-10-01), Grill et al.
patent: 6147009 (2000-11-01), Grill et al.
patent: 6159871 (2000-12-01), Loboda et al.
patent: 6169021 (2001-01-01), Akram et al.
patent: 6211093 (2001-04-01), Sandhu et al.
patent: 6242366 (2001-06-01), Beekman et al.
patent: 6287990 (2001-09-01), Cheung et al.
patent: 6303523 (2001-10-01), Cheung et al.
patent: 6340628 (2002-01-01), Van Cleemput et al.
patent: 6348725 (2002-02-01), Cheung et al.
patent: 6475564 (2002-11-01), Carter et al.
patent: 6479408 (2002-11-01), Shioya et al.
patent: 6479409 (2002-11-01), Shioya et al.
patent: 6511903 (2003-01-01), Yau et al.
patent: 6524972 (2003-02-01), Maeda
patent: 6537929 (2003-03-01), Cheung et al.
patent: 6562690 (2003-05-01), Cheung et al.
patent: 6570256 (2003-05-01), Conti et al.
patent: 6583048 (2003-06-01), Vincent et al.
patent: 6593247 (2003-07-01), Huang et al.
patent: 6627532 (2003-09-01), Gaillard et al.
patent: 6734115 (2004-05-01), Cheung et al.
patent: 6756323 (2004-06-01), Grill et al.
patent: 6764958 (2004-07-01), Nemani et al.
patent: 6770573 (2004-08-01), Grill et al.
patent: 6784119 (2004-08-01), Xia et al.
patent: 6790789 (2004-09-01), Grill
patent: 6825130 (2004-11-01), Todd
patent: 6846515 (2005-01-01), Vrtis et al.
patent: 2002/0098714 (2002-07-01), Grill et al.
patent: 2002/0105084 (2002-08-01), Li
patent: 2003/0032306 (2003-02-01), Conti et al.
patent: 2003/0089992 (2003-05-01), Rathi et al.
patent: 2003/0139062 (2003-07-01), Grill et al.
patent: 2003/0198742 (2003-10-01), Vrtis et al.
patent: 2003/0232137 (2003-12-01), Vrtis et al.
patent: 2004/0096593 (2004-05-01), Lukas et al.
patent: 2004/0096672 (2004-05-01), Lukas et al.
patent: 2004/0155340 (2004-08-01), Owada et al.
patent: 2004/0175501 (2004-09-01), Lukas et al.
patent: 2004/0175957 (2004-09-01), Lukas et al.
patent: 2004/0197474 (2004-10-01), Vrtis et al.
patent: 2005/0051900 (2005-03-01), Liu et al.
patent: 196 54 737 (1997-07-01), None
patent: 0 469 926 (1992-02-01), None
patent: 0 774 533 (1997-05-01), None
patent: 0 840 365 (1998-05-01), None
patent: 0 849 374 (1998-06-01), None
patent: 0 849 789 (1998-06-01), None
patent: 0 935 283 (1999-08-01), None
patent: 0 960 958 (1999-12-01), None
patent: 1 123 991 (2001-08-01), None
patent: 1 354 980 (2003-10-01), None
patent: WO 99/08249 (1998-02-01), None
patent: WO 99/38202 (1999-07-01), None
patent: WO 99/55526 (1999-11-01), None
patent: WO 99/63591 (1999-12-01), None
European Search Report for EP 00 11 2300, Dated Aug. 24, 2001.
Laura Peters, “Pursuing the Perfect Low K Dielectrics” Semiconductor International, Sep. 1998.
Bin Zhao, et al. “Integration of Low Dielectrics Constant Materials in Advanced Aluminum & Copper Interconnects”, Materials Research Symposium Proc., vol. 564, Materials Research Society, 1999. pp. 485-497.
European Search Report for EP 01 30 3567, dated Nov. 4, 2004 (AMAT/2592.P3).
Bakli, et al., “Materials and Processing for .025μm Multilevel Interconnect,” Microlelectronic Engineering 33 (1997) pp. 175-188.
Bhan, et al., “Deposition of Stable Low K and High Deposition Rate SiF4-Doped TEOS Fluorinated Silicon Dioxide (SiOF) Films,” Thin Solid Films 308-309 (1997) pp. 507-511.
C.F. Lin, et al., “Improved Ozone-Tetraethoxysilane Oxide Reliability for Deep Submicron Inter-Metal Dielectric Applications by Deposition of a Silane-Based Oxide Underlayer,” Thin Solid Films 308-309 (1997) pp. 621-626.
European Search Report from European Patent Office for 99906897.6 (2592.EP), dated Jan. 10, 2005.
Gaillard Frederic
Jeng Shin-Puu
Lim Tian-Hoe
Liu Kuowei
Lu Yung-Cheng
Applied Materials Inc.
Moser Patterson & Sheridan
Nhu David
LandOfFree
Method of decreasing the k value in sioc layer deposited by... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method of decreasing the k value in sioc layer deposited by..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method of decreasing the k value in sioc layer deposited by... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3524386