Method of controlling metal silicide formation

Details Method of controlling metal silicide formation Method of controlling metal silicide formation

2007-07-16

2010-10-12

Garber, Charles D (Department: 2812)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S197000, C438S199000, C438S592000, C257SE21632

Reexamination Certificate

active

07811877

ABSTRACT:
Methods of processing silicon substrates to form metal silicide layers thereover having more uniform thicknesses are provided herein. In some embodiments, a method of processing a substrate includes providing a substrate having a plurality of exposed regions comprising silicon, wherein at least two of the plurality of exposed regions have a different rate of formation of a metal silicide layer thereover; doping at least one of the exposed regions to control the rate of formation of a metal silicide layer thereover; and forming a metal silicide layer upon the exposed regions of the substrate, wherein the metal silicide layer has a reduced maximum thickness differential between the exposed regions.

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