Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Patent
1996-09-12
1997-08-26
Bowers, Jr., Charles L.
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
4272557, 427579, 438784, 438788, H01L 21316
Patent
active
056610939
ABSTRACT:
A method and apparatus for depositing a halogen-doped oxide film having a low dielectric constant that is resistant to moisture absorption and outgassing of the halogen dopant, and that retains these qualities despite subsequent processing steps. The method begins by introducing process gases (including a halogen-containing source gas) into a processing chamber. A halogen-doped layer is then deposited. The combination of process gases is then changed and a sealing layer deposited which seals the dopant into the halogen-doped layer. The sealing layer may, for example, be a carbon-rich layer or an undoped layer. These steps are repeated until the film reaches a selected thickness.
REFERENCES:
patent: 5334552 (1994-08-01), Homma
patent: 5429995 (1995-07-01), Nishiyama et al.
Musaka, Kasuyoki "Single Step Gap Filling Technology For Subhalf Micron Metal Spacings on Plasma Enhanced TEOS/O.sup.2 Chemical Vapor Deposition", Extended Abstracts Of The 1993 Int. Conf. On Solid State Devices and Materials, Mukuhari, 1993, pp. 510-512.
Orczyk Maciek
Ravi Kramadhati V.
Applied Materials Inc.
Bowers Jr. Charles L.
Whipple Matthew
LandOfFree
Method for the stabilization of halogen-doped films through the does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Method for the stabilization of halogen-doped films through the , we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for the stabilization of halogen-doped films through the will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1988281