Method for removing residues from a patterned substrate

Details Method for removing residues from a patterned substrate Method for removing residues from a patterned substrate

2008-03-26

2011-11-08

Vinh, Lan (Department: 1713)

Semiconductor device manufacturing: process

Chemical etching

Combined with coating step

C252S079100, C252S079200, C252S079300, C252S079400, C438S618000, C438S637000, C438S672000, C430S270100

Reexamination Certificate

active

08053368

ABSTRACT:
The present invention relates to a method for removing residues from open areas of a patterned substrate involving the steps of providing a layer of a developable anti-reflective coating (DBARC) over a substrate; providing a layer of a photoresist over said DBARC layer; pattern-wise exposing said photoresist layer and said DBARC layer to a radiation; developing said photoresist layer and said DBARC layer with a first developer to form patterned structures in said photoresist and DBARC layers; depositing a layer of a developer soluble material over said patterned structures; and removing said developer soluble material with a second developer.

REFERENCES:
patent: 6033993 (2000-03-01), Love et al.
patent: 6492075 (2002-12-01), Templeton et al.
patent: 6844131 (2005-01-01), Oberlander et al.
patent: 7261997 (2007-08-01), Cox et al.
patent: 7749904 (2010-07-01), Ho et al.
patent: 2007/0243484 (2007-10-01), Chen et al.
Eric K. Lin, et al. Science, vol. 297, (2002), pp. 372-375.

Affiliated with

Also associated with

Rating

Method for removing residues from a patterned substrate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for removing residues from a patterned substrate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for removing residues from a patterned substrate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4291328