Method for removing defects from silicon bodies by a...

Details Method for removing defects from silicon bodies by a... Method for removing defects from silicon bodies by a...

2007-04-10

2007-04-10

Deo, Duy-Vu N. (Department: 1765)

Etching a substrate: processes

Gas phase etching of substrate

Application of energy to the gaseous etchant or to the...

C216S079000, C216S080000, C438S719000

Reexamination Certificate

active

09720720

ABSTRACT:
A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.

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