Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Patent
1999-10-12
2000-10-24
Quach, T. N.
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
438629, 438631, 438636, 438724, H01L 21336
Patent
active
061366498
ABSTRACT:
The present invention provides a method for selectively removing anti-reflective coating (ARC) from the surface of a dielectric layer over the surface of a substrate without scratching the dielectric layer and/or tungsten contacts formed therein. In one embodiment, a fluoromethane (CH.sub.3 F)/oxygen (O.sub.2) etch chemistry is used to selectively remove the ARC layer. The CH.sub.3 F/O.sub.2 etch chemistry etches the ARC layer at a rate which is significantly faster than the etch rates of the dielectric layer or the tungsten contacts.
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Hui Angela T.
Ngo Minh Van
Pangrle Suzette K.
Ramsbey Mark T.
Sahota Kashmir
Advanced Micro Devices , Inc.
Ishimaru Mikio
Quach T. N.
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