Method for reducing the intrinsic stress of high density plasma

Details Method for reducing the intrinsic stress of high density plasma Method for reducing the intrinsic stress of high density plasma

1996-03-28

1999-11-02

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

Insulative material deposited upon semiconductive substrate

438788, 438729, 438789, 427579, 118723R, 118723I, H01L 2102

Patent

active

059769939

ABSTRACT:
A layer of reduced stress is formed on a substrate using an HDP-CVD system by delaying or interrupting the application of capacitively coupled RF energy. The layer is formed by introducing a process gas into the HDP system chamber and forming a plasma from the process gas by the application of RF power to an inductive coil. After a selected period, a second layer of the film is deposited by maintaining the inductively-coupled plasma and biasing the plasma toward the substrate to enhance the sputtering effect of the plasma. In a preferred embodiment, the deposited film is a silicon oxide film, and biasing is performed by application of capacitively coupled RF power from RF generators to a ceiling plate electrode and wafer support electrode.

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