Method for producing a semiconductor device

Details Method for producing a semiconductor device Method for producing a semiconductor device

2005-03-29

2005-03-29

Wong, Don (Department: 2821)

Electric lamp and discharge devices: systems

Discharge device load with fluent material supply to the...

Plasma generating

C315S111810, C118S7230IR

Reexamination Certificate

active

06873112

ABSTRACT:
The invention provides a method, for processing a substrate. The substrate is placed in a chamber, where the chamber comprises a substrate holder within the chamber and a dielectric window forming a side of the chamber. A gas is provided into the chamber. An antenna is used to generate an azimuthally symmetric electric field. A substantially azimuthally symmetric plasma is formed from the gas using the azimuthally symmetric electric field. A substantially uniform process rate is produced across a surface of a substrate.

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U.S. Appl. No. 09/440,794, entitled “Materials and Gas Chemistries for Processing Systems”, filed Nov. 15, 1999, Bailey et al.
U.S. Appl. No. 09/470,236, entitled “Plasma Processing System with Dynamic Gas Distribution Control”, filed Nov. 15, 1999, Bailey et al.
U.S. Appl. No. 09/977,569, entitled Method and Apparatus for Producing Uniform Process Rates, filed Oct. 12, 2001, Bailey et al.
International Search Report, date mailed Mar. 25, 2003.

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