Thick gate oxide transistor and electrostatic discharge...

Details Thick gate oxide transistor and electrostatic discharge... Thick gate oxide transistor and electrostatic discharge...

2005-03-01

2005-03-01

Lee, Eddie (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S361000, C257S173000

Reexamination Certificate

active

06861711

ABSTRACT:
An electrostatic discharge (ESD) protection circuit that includes an transistor with a gate electrode isolated from the semiconductor substrate. The transistor can be an insulated gate bipolar transistor (IGBT) connected between an integrated circuit (IC) pad and ground. The IGBT includes a parasitic thyristor that latches when the voltage at the pad exceeds a threshold level and does not turn off until the charge at the pad is dissipated, thereby preventing electrostatic damage to the IC.

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