Method for manufacturing a semiconductor device containing...

Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma

Reexamination Certificate

Rate now

  [ 0.00 ] – not rated yet Voters 0   Comments 0

Details

C438S592000, C257SE21165

Reexamination Certificate

active

07422967

ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment of the present invention, without limitation, the method for manufacturing the semiconductor device includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes forming fluorine containing regions (220) in the source/drain regions (190) employing a fluorine containing plasma using a power level of less than about 75 Watts, forming a metal layer (310) over the substrate (110) and fluorine containing regions (220), and reacting the metal layer (310) with the fluorine containing regions (220) to form metal silicide regions (410) in the source/drain regions (190).

REFERENCES:
patent: 7208409 (2007-04-01), Lu et al.
patent: 2001/0045605 (2001-11-01), Miyashita et al.
patent: 2002/0168828 (2002-11-01), Cheng et al.

LandOfFree

Say what you really think

Search LandOfFree.com for the USA inventors and patents. Rate them and share your experience with other people.

Rating

Method for manufacturing a semiconductor device containing... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Method for manufacturing a semiconductor device containing..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Method for manufacturing a semiconductor device containing... will most certainly appreciate the feedback.

Rate now

     

Profile ID: LFUS-PAI-O-3976806

  Search
All data on this website is collected from public sources. Our data reflects the most accurate information available at the time of publication.