Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Plasma
Reexamination Certificate
2005-05-12
2008-09-09
Chaudhari, Chandra (Department: 2891)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Plasma
C438S592000, C257SE21165
Reexamination Certificate
active
07422967
ABSTRACT:
The present invention provides a method for manufacturing a semiconductor device. In one embodiment of the present invention, without limitation, the method for manufacturing the semiconductor device includes forming a gate structure (120) over a substrate (110) and forming source/drain regions (190) in the substrate (110) proximate the gate structure (120). The method further includes forming fluorine containing regions (220) in the source/drain regions (190) employing a fluorine containing plasma using a power level of less than about 75 Watts, forming a metal layer (310) over the substrate (110) and fluorine containing regions (220), and reacting the metal layer (310) with the fluorine containing regions (220) to form metal silicide regions (410) in the source/drain regions (190).
REFERENCES:
patent: 7208409 (2007-04-01), Lu et al.
patent: 2001/0045605 (2001-11-01), Miyashita et al.
patent: 2002/0168828 (2002-11-01), Cheng et al.
DeLoach Juanita
Hall Lindsey H.
Lu Jiong-Ping
Miles Donald S.
Robertson Lance S.
Brady III Wade James
Chaudhari Chandra
Telecky , Jr. Frederick J.
Texas Instruments Incorporated
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