Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-05-16
2006-05-16
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S199000
Reexamination Certificate
active
07045428
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming on a substrate a first gate dielectric layer that has a first substantially vertical component, then forming a first metal layer on the first gate dielectric layer. After forming on the substrate a second gate dielectric layer that has a second substantially vertical component, a second metal layer is formed on the second gate dielectric layer. In this method, a conductor is formed that contacts both the first metal layer and the second metal layer.
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Barns Chris E.
Brask Justin K.
Chau Robert S.
Datta Suman
Doczy Mark L.
Fourson George
Intel Corporation
Plimier Michael D.
Toledo Fernando L.
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