Semiconductor device manufacturing: process – Coating of substrate containing semiconductor region or of... – Multiple layers
Reexamination Certificate
2006-12-26
2006-12-26
Smith, Bradley K. (Department: 2891)
Semiconductor device manufacturing: process
Coating of substrate containing semiconductor region or of...
Multiple layers
C438S778000
Reexamination Certificate
active
07153784
ABSTRACT:
A method for making a semiconductor device is described. That method comprises forming a first dielectric layer on a substrate, then forming a trench within the first dielectric layer. After forming a second dielectric layer on the substrate, a first metal layer is formed within the trench on a first part of the second dielectric layer. A second metal layer is then formed on the first metal layer and on a second part of the second dielectric layer.
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Barns Chris E.
Brask Justin K.
Cappellani Annalisa
Chau Robert S.
Datta Suman
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