Semiconductor device manufacturing: process – Introduction of conductivity modifying dopant into... – Ion implantation of dopant into semiconductor region
Reexamination Certificate
2007-01-23
2007-01-23
Dang, Phuc T. (Department: 2818)
Semiconductor device manufacturing: process
Introduction of conductivity modifying dopant into...
Ion implantation of dopant into semiconductor region
C438S301000, C438S367000, C257S288000
Reexamination Certificate
active
11003000
ABSTRACT:
An integrated microelectronic circuit has a multi-layer interconnect structure overlying the transistors consisting of stacked metal pattern layers and insulating layers separating adjacent ones of said metal pattern layers. Each of the insulating layers is a dielectric material with plural gas bubbles distributed within the volume of the dielectric material to reduce the dielectric constant of the material, the gas bubbles being formed by ion implantation of a gaseous species into the dielectric material.
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Van de Ven, Evert P., Connick, I-Wen, and Harrus, Alain S., “Advantages of Dual Frequency PECVD for Deposition of ILD and Passivation Films”,IEEE, Proceeding
Al-Bayati Amir
Collins Kenneth S.
Gallo Biagio
Hanawa Hiroji
MacWilliams Ken
Applied Materials Inc.
Dang Phuc T.
Law Office of Robert M. Wallace
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