Method for insitu vapor generation for forming an oxide on a sub

Details Method for insitu vapor generation for forming an oxide on a sub Method for insitu vapor generation for forming an oxide on a sub

2000-02-22

2000-12-12

Bowers, Charles

Semiconductor device manufacturing: process

Coating of substrate containing semiconductor region or of...

By reaction with substrate

H01L 2131

Patent

active

061598666

ABSTRACT:
A method of forming an oxide on a substrate. According to the method of the present invention a substrate is placed in a chamber. An oxygen containing gas and a hydrogen containing gas are then fed into the chamber. The oxygen containing gas and the hydrogen containing gas are then caused to react with one another to form water vapor in the chamber. The water vapor then oxidizes the substrate.

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