Method for improving capacitance in DRAM capacitors and devices

Details Method for improving capacitance in DRAM capacitors and devices Method for improving capacitance in DRAM capacitors and devices

1997-11-05

2000-07-11

Whitehead, Jr., Carl

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

438253, 438396, 438398, H01L 218242

Patent

active

060872179

ABSTRACT:
The present invention discloses a method for forming a DRAM capacitor that has improved charge capacity and a DRAM capacitor formed by such method. The method can be carried out by first depositing an oxide layer on a lower polysilicon electrode layer on a semiconductor structure, then polishing the top surface of the oxide layer to form an uneven surface which provides increased surface area, and then anisotropically etching away the oxide layer while reproducing the uneven surface of the oxide layer onto the lower polysilicon electrode layer such that an increased charge capacity can be realized. The anisotropic etch chemistry should be selected such that the etchant etches away both the oxide layer and the polysilicon layer, and preferably, the etchant should have a higher selectivity toward polysilicon and a lower selectivity toward oxide such that the oxide layer can be completely removed while only a portion of the polysilicon layer is removed to form the uneven surface.

REFERENCES:
patent: 5158905 (1992-10-01), Ahn
patent: 5223734 (1993-06-01), Lowrey et al.
patent: 5302540 (1994-04-01), Ko et al.
patent: 5466627 (1995-11-01), Lur et al.
patent: 5488008 (1996-01-01), Kawamura
patent: 5670405 (1997-09-01), Tseng

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