Method for high aspect ratio HDP CVD gapfill

Details Method for high aspect ratio HDP CVD gapfill Method for high aspect ratio HDP CVD gapfill

2006-06-20

2006-06-20

Vinh, Lan (Department: 1765)

Semiconductor device manufacturing: process

Chemical etching

Vapor phase etching

C438S706000, C438S714000, C427S569000

Reexamination Certificate

active

07064077

ABSTRACT:
A method of depositing a high density plasma silicon oxide layer having improved gapfill capabilities. In one embodiment the method includes flowing a process gas consisting of a silicon-containing source, an oxygen-containing source and helium into a substrate processing chamber and forming a plasma from the process gas. The ratio of the flow rate of the helium with respect to the combined flow rate of the silicon source and oxygen source is between 0.5:1 and 3.0:1 inclusive. In one particular embodiment, the process gas consists of monosilane (SiH4), molecular oxygen (O2) and helium.

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