Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate
Patent
1998-12-16
2000-12-26
Elms, Richard
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
438931, H01L 21306
Patent
active
06165874&
ABSTRACT:
A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).
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Larkin David J.
Matus Lawrence G.
Neudeck Philip G.
Powell J. Anthony
Elms Richard
Smith Bradley K.
The United States of America as represented by the Administrator
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