Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Patent
1998-01-27
2000-08-29
Tsai, Jey
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
438683, H01L 214763, H01L 2144
Patent
active
061108219
ABSTRACT:
Titanium is sputtered in an ionized metal plasma sputtering chamber to form titanium silicide in situ in the bottom of openings onto silicon in a series of steps that change the temperature and deposition conditions of sputtering. Ionized titanium is sputtered cold, the temperature is rapidly increased by passing argon through the heated substrate support without sputtering, thereby initiating titanium silicide formation, and then the sputtering of titanium ions is continued at high temperatures to deposit titanium silicide.
To deposit titanium silicide in very high aspect ratio openings, a first layer of titanium atoms is sputter deposited in conventional manner to line the sidewalls of the openings, followed by sputtering from a plasma and continuing with the above process.
REFERENCES:
patent: 5512512 (1996-04-01), Isobe
patent: 5565382 (1996-10-01), Tseng et al.
patent: 5635036 (1997-06-01), Demaray et al.
patent: 5895266 (1999-04-01), Fu et al.
Chen Fusen
Ding Peijun
Kohara Gene Y.
Levinstein Hyman Joseph
Xu Zheng
Applied Materials Inc.
Jones Josetta
Morris Birgit E.
Tsai Jey
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