Semiconductor device manufacturing: process – Formation of semiconductive active region on any substrate – On insulating substrate or layer
Reexamination Certificate
2005-04-19
2005-04-19
Niebling, John F. (Department: 2812)
Semiconductor device manufacturing: process
Formation of semiconductive active region on any substrate
On insulating substrate or layer
C438S311000, C438S312000, C438S341000, C438S458000
Reexamination Certificate
active
06881650
ABSTRACT:
A method for forming SOI substrates including a SOI layer containing germanium and a strained silicon layer disposed on the SOI layer, comprises forming a relaxed silicon-germanium layer on a first silicon substrate using an epitaxial growth method, and forming a porous silicon-germanium layer thereon. A silicon-germanium epitaxial layer is formed on the porous silicon-germanium layer, an oxide layer is formed on a second silicon substrate, the second silicon substrate is bonded where the oxide layer is formed to the first silicon substrate where the silicon-germanium epitaxial layer is formed. Layers are removed to expose the silicon-germanium epitaxial layer and a strained silicon epitaxial layer is formed thereon. The porous silicon-germanium layer prevents lattice defects of the relaxed silicon-germanium layer from transferring to the silicon-germanium epitaxial layer. Therefore, it is possible to form the silicon-germanium layer and the strained silicon layer of the SOI layer without defects.
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Bae Geum-Jong
Fujihara Kazuyuki
Kim Sang-su
Lee Jung-Il
Lee Nae-In
Isaac Stanetta
Lee, Sterba & Morse P.C.
Niebling John F.
Samsung Electronics Co,. Ltd.
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