Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2006-06-27
2006-06-27
Estrada, Michelle (Department: 2823)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S664000, C438S674000, C438S682000
Reexamination Certificate
active
07067368
ABSTRACT:
A method of fabricating a complementary metal oxide semiconductor (CMOS) device, wherein the method comprises forming a first well region in a semiconductor substrate for accommodation of a first type semiconductor device; forming a second well region in the semiconductor substrate for accommodation of a second type semiconductor device; shielding the first type semiconductor device with a mask; depositing a first metal layer over the second type semiconductor device; performing a first salicide formation on the second type semiconductor device; removing the mask; depositing a second metal layer over the first and second type semiconductor devices; and performing a second salicide formation on the first type semiconductor device. The method requires only one pattern level and it eliminates pattern overlay as it also simplifies the processes to form different silicide material over different devices.
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Cabral, Jr. Cyril
Dziobkowski Chester T.
Ellis-Monaghan John J.
Fang Sunfei
Lavoie Christian
Cioffi, Esq. James J.
Estrada Michelle
Gibb I.P. Law Firm LLC
International Business Machines - Corporation
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