Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2006-02-07
2006-02-07
Cao, Phat X. (Department: 2814)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S614000
Reexamination Certificate
active
06995084
ABSTRACT:
A method for forming an interconnect structure for a semiconductor device includes defining a via in a passivation layer so as expose a top metal layer in the semiconductor device. A seed layer is formed over the passivation layer, sidewalls of the via, and the top metal layer. A barrier layer is formed over an exposed portion of the seed layer, the exposed portion defined by a first patterned opening. The semiconductor device is annealed so as to cause atoms from the barrier layer to diffuse into the seed layer thereunderneath, wherein the annealing causes diffused regions of the seed layer to have an altered electrical resistivity and electrode potential with respect to undiffused regions of the seed layer.
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Biggs Julie C.
Cheng Tien-Jen
Eichstadt David E.
Griffith Jonathan H.
Knickerbocker Sarah H.
Cao Phat X.
Cioffi James
International Business Machines - Corporation
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