Method for forming pattern by using graft copolymerization

Details Method for forming pattern by using graft copolymerization Method for forming pattern by using graft copolymerization

1988-05-27

1990-10-02

Dees, Jose

Radiation imagery chemistry: process, composition, or product th

Imaging affecting physical property of radiation sensitive...

Forming nonplanar surface

430325, 430328, 430967, G03C 516

Patent

active

049606760

ABSTRACT:
The method for forming a pattern according to the present invention comprises a step of irradiating a resist layer applied on a substrate to be worked with X-ray radiation through a mask in an oxygen-containing atomsphere to expose said resist layer, a step of decomposing a peroxide produced within said exposed resist layer in an atmosphere free from oxygen, a step of introducing a monomer into said atmosphere free from oxygen to conduct graft copolymerization of said resist layer at the exposed portion with said monomer, and a step of developing said resist layer to remove said resist layer at the portion remaining ungrafted.

REFERENCES:
patent: 4587203 (1986-05-01), Brault et al.
patent: 4596761 (1986-06-01), Brault
patent: 4657845 (1987-04-01), Frechet et al.
Gazard et al, Polymer Engineering & Science, Nov. 1980, vol. 20, No. 16, pp. 1069-1072.
Liu et al, "Polymethyl Methacrylate Resist Sensitivity Enhancement in X-Ray Lithography . . . ", Appl. Phys. Lett., 44(10), May 15, 1984, pp. 973-975.
Tagawa, "Pulse Radiolysis and Laser Photolysis Studies . . . ", Radiat. Phys. Chem., vol. 27(6), 1986, pp. 455-459.

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