Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – Insulated gate formation
Reexamination Certificate
2006-01-24
2006-01-24
Fourson, George (Department: 2823)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
Insulated gate formation
C438S585000, C438S720000
Reexamination Certificate
active
06989323
ABSTRACT:
A method for forming a gate structure for a semiconductor device includes defining a conductive sacrificial structure on a substrate, forming a reacted metal film on sidewalls of the conductive sacrificial structure, and removing unreacted portions of the conductive sacrificial structure.
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Doris Bruce B.
Furukawa Toshiharu
Hakey Mark C.
Holmes Steven J.
Horak David V.
Cantor & Colburn LLP
Fourson George
International Business Machines - Corporation
Jaklitsch Lisa U.
Toledo Fernando L.
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