Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2005-01-04
2009-12-22
Pham, Thanhha (Department: 2894)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S640000, C438S700000, C438S738000, C257SE21579
Reexamination Certificate
active
07635645
ABSTRACT:
Methods for forming an interconnection line and interconnection line structures are disclosed. The method includes forming an interlayer insulating layer on a semiconductor substrate, wherein the interlayer insulating layer is formed of a carbon-doped low-k dielectric layer. An oxidation barrier layer is formed on the interlayer insulating layer. An oxide capping layer is formed on the oxidation barrier layer. A via hole is in the oxide capping layer, the oxidation barrier, and the interlayer insulating layer. A conductive layer pattern is formed within the via hole.
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Kim Jae-Hak
Lee Kyoung-Woo
Lee Seung-Jin
Park Ki-Kwan
Shin Hong-Jae
Pham Thanhha
Samsung Electronics Co,. Ltd.
Volentine & Whitt PLLC
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