Semiconductor device manufacturing method including oblique...

Details Semiconductor device manufacturing method including oblique... Semiconductor device manufacturing method including oblique...

2006-09-22

2009-08-25

Lebentritt, Michael S (Department: 2829)

Semiconductor device manufacturing: process

Making field effect device having pair of active regions...

Having insulated gate

C438S302000, C438S303000, C438S305000, C438S525000, C257SE21411, C257SE21416, C257SE21422, C257SE21626, C257SE21682, C257SE29268, C257SE29286, C257SE29287, C257SE29306

Reexamination Certificate

active

07579246

ABSTRACT:
An active region and an opposite conductivity active region are formed in a semiconductor substrate. The opposite conductivity active region is covered with a resist pattern. Impurities are implanted into a surface layer of the active region. An angle θ0is defined as a tilt angle obtained by tilting a virtual plane perpendicular to the substrate and including an edge of the active region, toward the resist pattern by using as a fulcrum a point on the substrate nearest to the resist pattern, until the virtual plane contacts the resist pattern. The ion implantation is performed in a direction having a tilt angle larger than θ0and allowing ions passed through the uppermost edge of the resist pattern to be incident upon an area between the resist pattern and the active region, and is not performed along a direction allowing the ions to be incident upon the active region.

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