Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – Having insulated gate
Reexamination Certificate
2011-03-29
2011-03-29
Wojciechowicz, Edward (Department: 2895)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
Having insulated gate
C438S703000, C216S041000, C216S049000, C430S322000, C430S329000
Reexamination Certificate
active
07915115
ABSTRACT:
Methods for forming a front-end-of-the-line (FEOL) dual high-k gate using a photoresist mask and structures thereof are disclosed. One embodiment of the disclosed method includes depositing a high-k dielectric film on a substrate of a FEOL CMOS structure followed by depositing a photoresist thereon; patterning the high-k dielectric according to the photoresist; and removing the photoresist thereafter. The removing of the photoresist includes using an organic solvent followed by removal of any residual photoresist including organic and/or carbon film. The removal of residual photoresist may include a degas process, alternatively known as a bake process. Alternatively, a nitrogen-hydrogen forming gas (i.e., a mixture of nitrogen and hydrogen) (N2/H2) or ammonia (NH3) may be used to remove the photoresist mask. With the use of the plasma nitrogen-hydrogen forming gas (N2/H2) or a plasma ammonia (NH3), no apparent organic residual is observed.
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Chudzik Michael P.
Hon Wong Keith Kwong
Jha Rashmi
Moumen Naim
Tsang Ying H.
Advanced Micro Devices , Inc.
Hoffman Warnick LLC
International Business Machines - Corporation
Petrokaitis Joseph J.
Wojciechowicz Edward
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