Semiconductor device manufacturing: process – Coating with electrically or thermally conductive material – To form ohmic contact to semiconductive material
Reexamination Certificate
2008-10-10
2011-10-11
Arora, Ajay K (Department: 2892)
Semiconductor device manufacturing: process
Coating with electrically or thermally conductive material
To form ohmic contact to semiconductive material
C438S643000, C438S653000, C438S927000, C257S751000, C257S627000, C257SE21021
Reexamination Certificate
active
08034709
ABSTRACT:
Provided is a method for forming a composite barrier layer with superior barrier qualities and superior adhesion properties to both dielectric materials and conductive materials as the composite barrier layer extends throughout the semiconductor device. The composite barrier layer may be formed in regions where it is disposed between two conductive layers and in regions where it is disposed between a conductive layer and a dielectric material. The composite barrier layer may consist of various pluralities of layers and the arrangement of layers that form the composite barrier layer may differ as the barrier layer extends throughout different sections of the device. Amorphous layers of the composite barrier layer generally form boundaries with dielectric materials and crystalline layers generally form boundaries with conductive materials such as interconnect materials.
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Hsieh Ching-Hua
Huang Cheng-Lin
Lee Hsien-Ming
Liang Mong-Song
Lin Jing-Cheng
Arora Ajay K
Duane Morris LLP
Taiwan Semiconductor Manufacturing Company , Ltd.
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