Method for forming C4 connections on integrated circuit...

Details Method for forming C4 connections on integrated circuit... Method for forming C4 connections on integrated circuit...

2006-04-26

2009-12-22

Nguyen, Ha Tran T (Department: 2829)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S611000, C438S612000, C257S738000

Reexamination Certificate

active

07635643

ABSTRACT:
A method for forming preferably Pb-lead C4 connections or capture pads with ball limiting metallization on an integrated circuit chip by using a damascene process and preferably Cu metallization in the chip and in the ball limiting metallization for compatibility. In two one embodiment, the capture pad is formed in the top insulating layer and it also serves as the final level of metallization in the chip.

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patent: 2003/0215984 (2003-11-01), Pogge et al.
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patent: 2005/0258540 (2005-11-01), Minda

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