Method for forming a dual damascene structure

Details Method for forming a dual damascene structure Method for forming a dual damascene structure

2007-01-30

2007-01-30

Deo, Duy-Vu N. (Department: 1765)

Semiconductor device manufacturing: process

Coating with electrically or thermally conductive material

To form ohmic contact to semiconductive material

C438S622000, C438S624000, C438S626000, C438S706000, C438S714000

Reexamination Certificate

active

10674675

ABSTRACT:
A method for forming a dual damascene feature is provided. Vias are formed in an etch layer. A trench patterned mask is provided over the etch layer. A trench is etched, where the etching the trench comprises a cycle of forming protective sidewalls over the sidewalls of the vias and etching a trench through the trench patterned mask. The mask is then stripped.

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